SEOUL , Korea – April 20 , 2005 : Samsung Electronics Co., Ltd., the leader in advanced semiconductor technology, today announced that it has developed a 4Gb (Giga B it) OneNAND ™ Flash memory device for multimedia phones, featuring micro-compact dimensions, low power consumption and high performance, in addition to its high density.Read Samsung’s press release here.
OneNAND is expected to be especially popular as the memory device powering tiny 3G mobile phones, advanced PDAs, a new generation of portable gaming systems and the highest performing digital cameras. The new OneNAND memory device operates on 1.8V, reducing power consumption to nearly half of the existing 3.3V level for other types of mobile memory. It also features a micro-compact size (1 1 x13x1. 4 mm), considerably smaller than mobile memory of the same capacity.
Monday, April 25, 2005
Samsung - 4Gb flash memory
Samsumg press release:
Subscribe to:
Post Comments (Atom)
Posts
No comments:
Post a Comment